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Flip chip bonding using ink-jet printing technology

机译:使用喷墨印刷技术翻转芯片粘合

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摘要

In this paper, a bump-forming method for flip chip bonding using ink-jet printing technology is proposed. A flip chip bonded transmission line using ink-jet printed silver bumps consisting of conductive ink containing silver nanoparticles was fabricated to verify the electrical characteristics after the flip chip bonding process. The transmission line was designed according to microstrip theory for a frequency range of 300 kHz to 3 GHz, with the size of fabricated line being 35 (width) x 8.64 (length) x 0.5 (thickness) mm(3). The electrical characteristics of a reference microstrip and the flip chip bonded line were compared with FEM simulation and measurement results. Direct current (DC) resistances of both the reference line and the flip chip bonded line were measured to be 3.1 omega and 3.2 omega, respectively. The discrepancy between measured insertion loss and the simulation result was only 0.04 dB at 3 GHz, and the return loss was greater than 15 dB in the measurement frequency range. As a result of the analysis, it was confirmed that the DC resistance of ink-jet printed bumps account for 0.56% of the total DC resistance, and the ink-jet printed bumps hardly affected the radio frequency (RF) characteristics of the RF transmission line at low frequencies. The results demonstrate that ink-jet printed silver bumps can be used for a simple and low-cost flip chip bonding process. We expect that the proposed method can be applied to the packaging of various electronics such as flexible, wearable devices and RF applications.
机译:本文提出了一种利用喷墨印刷技术的倒装芯片键合的凸块形成方法。使用喷墨印刷银凸块的倒装芯片粘合传输线由由含银纳米颗粒的导电油墨组成,以验证倒装芯片粘接过程后的电特性。传输线根据微带理论设计300 kHz至3 GHz的频率范围,制造线的尺寸为35(宽度)×8.64(长度)×0.5(厚度)mm(3)。将参考微带和倒装芯片粘合线的电特性与有限元模拟和测量结果进行比较。将参考线和倒装芯片粘合线的直流电流(DC)电阻分别为3.1ω和3.2ω。测量插入损耗和仿真结果之间的差异仅为3 GHz 0.04 dB,在测量频率范围内返回损耗大于15 dB。由于分析结果,证实喷墨印刷凸块的直流电阻占总直流电阻的0.56%,喷墨印刷凸块几乎影响了RF传输的射频(RF)特性低频的线。结果表明,喷墨印刷银凸块可用于简单且低成本的倒装芯片粘合工艺。我们预期,所提出的方法可以应用于各种电子设备的包装,例如柔性,可穿戴设备和RF应用。

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