首页> 外文会议>Electronic Packaging Technology amp; High Density Packaging, 2009. ICEPT-HDP '09 >Advanced Chip to Wafer Bonding: A Flip Chip to Wafer Bonding Technology for High Volume 3DIC Production Providing Lowest Cost of Ownership
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Advanced Chip to Wafer Bonding: A Flip Chip to Wafer Bonding Technology for High Volume 3DIC Production Providing Lowest Cost of Ownership

机译:先进的芯片到晶圆键合:一种倒装芯片到晶圆键合技术,可实现大批量3DIC生产,并提供最低的拥有成本

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The shrinkage and the integration of various functionalities into electrical devices, like computers or mobile phones, lead to an ongoing need for shrinkage of the integrated semiconductor units. One possibility for manufacturing of highly integrated electrical devices is the System in Package (SiP) approach where various semiconductor chips with different functionalities are stacked and electrically connected to each other. The shrinkage affects all levels of the SiP, e.g. the transistor size, the die thickness, the height of the die stack and also the dimension and shape of interconnects between the dies. The shrinkage of the die interconnects can cause difficulties of the existing widely used joint technologies, e.g. solder bumping, because of low amount of involved solder, so that the assembly yields drops and the reliability of the interconnects lowers. The Advanced Chip to Wafer (AC2W) bonding is a two step process for stacking and bonding dies on wafers. First all dies are aligned and tacked on the wafer and in the second step all dies are bonded simultaneously permanently to the wafer. This process allows having force while bonding the dies on the wafer. In that way low solder volume interconnects can be formed on a wafer level with high assembly yield and throughput. The Cost of Ownership (CoO) connected with the throughput of the AC2W process can be an order of magnitude smaller then for comparable chip to wafer bonding processes and therefore the AC2W offers a low cost chip to wafer bonding process for high volume production. This paper will show the AC2W bonding process in detail, some issues at die joint shrinkage and a comprehensive throughput and CoO comparison between the AC2W and comparable process flows.
机译:缩小功能以及将各种功能集成到诸如计算机或移动电话之类的电子设备中,导致对集成半导体单元的缩小的持续需求。制造高度集成的电气设备的一种可能性是系统级封装(SiP)方法,其中将具有不同功能的各种半导体芯片堆叠在一起并相互电连接。收缩影响SiP的所有水平,例如晶体管尺寸,管芯厚度,管芯叠层的高度以及管芯之间互连的尺寸和形状。管芯互连件的收缩会给现有的广泛使用的接合技术带来困难,例如:由于所含焊料量少,焊料隆起,从而使组装良率下降,互连的可靠性降低。先进的晶片对晶片(AC2W)接合是两步过程,用于在晶片上堆叠和接合管芯。首先,将所有管芯对准并钉在晶片上,然后在第二步中,将所有管芯同时永久地粘结到晶片上。该过程允许在将管芯键合到晶片上时具有力。以此方式,可以以高组装良率和高产量在晶片级上形成低焊料量的互连。与AC2W工艺的吞吐量相关的拥有成本(CoO)可能比芯片到晶圆键合工艺的可比性小一个数量级,因此AC2W提供了低成本的芯片到晶圆键合工艺,可实现大批量生产。本文将详细介绍AC2W粘合工艺,模头接合收缩以及一些综合问题,以及AC2W与可比较工艺流程之间的综合产能和CoO比较。

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