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机译:4H-SiC衬底乳斑对AlGaN / GaN异质结构外延和微观结构的影响
Aristotle Univ Thessaloniki Dept Phys Thessaloniki 54124 Greece;
Aristotle Univ Thessaloniki Dept Phys Thessaloniki 54124 Greece;
Aristotle Univ Thessaloniki Dept Phys Thessaloniki 54124 Greece;
Aristotle Univ Thessaloniki Dept Phys Thessaloniki 54124 Greece;
Polish Acad Sci Inst High Pressure Phys Unipress Sokolowska 29-37 PL-01142 Warsaw Poland;
Polish Acad Sci Inst High Pressure Phys Unipress Sokolowska 29-37 PL-01142 Warsaw Poland;
Univ Antwerp Electron Microscopy Mat Sci EMAT Groenenborgerlaan 171 B-2020 Antwerp Belgium;
Univ Antwerp Electron Microscopy Mat Sci EMAT Groenenborgerlaan 171 B-2020 Antwerp Belgium;
TEM; HRTEM; HEMT; SiC substrate; AlGaN/GaN; Heterostructure;
机译:4H-SiC衬底乳斑对AlGaN / GaN异质结构外延和微观结构的影响
机译:在2°-off 4H-SiC衬底上生长的AlGaN / GaN异质结构的潜力
机译:电流截止频率为190 GHz的4H-SiC衬底上的AlGaN / GaN异质结构场效应晶体管
机译:Si(111)衬底上用于AlGaN / GaN异质结构外延的不同缓冲方法
机译:微金属应用中通过金属有机气相外延生长在6H-SiC(0001)衬底上的GaN和AlGaN的生长,掺杂和表征。
机译:使用低Al组成的单个AlGaN层在Si衬底上生长高质量和均匀的AlGaN / GaN异质结构
机译:衬底表面制备对不同取向4H-SiC衬底上LP MOVPE GaN外延的影响
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管