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机译:氮气掺杂对中子辐照Czochralski硅空位 - 氧气复合物的影响
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;
Zhejiang Sci Tech Univ Dept Phys Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;
Czochralski silicon; Neutron irradiation; Nitrogen doping; Vacancy-oxygen complexes;
机译:氮气掺杂对中子辐照Czochralski硅空位 - 氧气复合物的影响
机译:中子辐照氮掺杂直拉硅晶体中增强的氧沉淀
机译:锗掺杂对中子辐照中节定复合物的生产和演化的影响Czochralski硅
机译:高温退火后快中子辐照氮掺杂的直拉硅的缺陷
机译:快中子辐照硅正P-N-正N二极管电容特性的深陷阱模型的建立。
机译:可见光照射下掺氮和纯TiO2对HeLa细胞的杀伤作用比较
机译:Czochralski-Crowrow中子嬗变掺杂硅氧气的电学研究
机译:EpR研究电子辐照硅中的缺陷:空位氧配合物的三重态。