Homogeneous doping of silicon monocrystals - by controlled irradiation with thermal neutrons to give desired position and intensity of doping

摘要

Doped silicon monocrystals of specific resistance 30 ohms.cm, pref. 1000 ohms-cm, are prod. by the reaction. 30Si(n, gamma)31Si B - over right arrow 31p. The conductivity of the silicon to be doped is measured and the neutron flux adjusted in proportion to this. Pref. the neutron flux is adjusted to produce at least the same concentration of dopant as in the starting material, but of opposite conductivity type.