SiC-MOSFET with High Threshold Voltage and Low On-Resistance Using Halo Structure

摘要

Fuji Electric has developed a trench gate MOSFET that uses silicon carbide (SiC) to reduce power dissipation of power semiconductor devices. Although shortening the MOSFET channel length can further reduce power dissipation, this makes it necessary to suppress the drop in the threshold voltage and breakdown voltage due to the short-channel effect. The simulations and prototype for a vertical trench gate SiC-MOSFET with a halo structure demonstrated the suppression of the short-channel effect. We were thereby able to reduce on-resistance while maintaining a high threshold voltage and breakdown voltage.