Studies on ferroelectric and nanomechanical response of single-layered PZT thick film for energy harvester applications

摘要

We have made an attempt to fabricate free standing warpage free PZT thick films of 100 mu m thickness by tape casting method. The poly crystalline nature and nanoscale polarization switching of free standing thick film were confirmed using X-ray diffraction technique and piezo force microscopy, respectively. The piezoelectric coefficient (d(33)) of 100 mu m free-standing Pb(Zr0.56Ti0.44)O-3 [PZT] thick film was calculated using double beam laser interferometer and found to be 400 pm/V. From the results, it indicates that free-standing PZT thick films are suitable candidate for miniaturization of harvesting device by directly bonding them on microsystem components for microelectromechanical systems (MEMS) applications.