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机译:DC和RF特性的增强型Al2O3 / AlGaN / GaN MIS-HEMT由浅凹槽制成的氟处理和深凹陷
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
Agcy Def Dev Daejeon 34186 South Korea;
Agcy Def Dev Daejeon 34186 South Korea;
RF Power Component Res Grp Elect &
Telecommun Res Inst Daejeon 34129 South Korea;
机译:DC和RF特性的增强型Al2O3 / AlGaN / GaN MIS-HEMT由浅凹槽制成的氟处理和深凹陷
机译:含HfO2和Al2O3栅绝缘体的Si基AlGaN / GaN嵌入式MIS-HEMT的特性比较研究
机译:深度凹陷的GaN / AlGaN / GaN HEMT中DC-RF扩散与栅漏之间的相关性
机译:采用基于CF4和基于Ch的等离子栅极凹陷工艺的凹陷栅AlGaN / GaN HEMT的DC和RF特性比较
机译:洞察N极GaN深凹槽垫的设计,制造和MM波功率性能
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:双向V T偏移后的机制在碳掺杂全嵌入的AlGaN / GaN Mis-Hemts中的负偏置温度不稳定应力
机译:利用无缺陷栅极凹陷和激光退火改善alGaN / GaN / si mOsFET的器件性能和可靠性。