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机译:高级CMOS工艺技术节点中应力/应变映射和随机掺杂剂波动的作用
Department of Electronics and Communication Engineering Siksha 'O' Anusandhan (Deemed to be University) Bhubaneswar Odisha 751030 India;
Department of Electronics and Communication Engineering Siksha 'O' Anusandhan (Deemed to be University) Bhubaneswar Odisha 751030 India;
Department of Electronics and Communication Engineering Siksha 'O' Anusandhan (Deemed to be University) Bhubaneswar Odisha 751030 India;
Department of Electronics and Communication Engineering Silicon Institute of Technology Bhubaneswar Odisha 751024 India;
Department of Electronics and Communication Engineering Siksha 'O' Anusandhan (Deemed to be University) Bhubaneswar Odisha 751030 India;
Department of Electronics and Communication Engineering Siksha 'O' Anusandhan (Deemed to be University) Bhubaneswar Odisha 751030 India;
strained-Si; strained-SiGe; stress/strain mapping; FinFET; technology computer aided design; TCAD; random discrete dopants; RDD;
机译:高级CMOS工艺技术节点中应力/应变映射和随机掺杂剂波动的作用
机译:随机掺杂波动(RDF)对90和65 nm CMOS技术单事件漏洞的影响
机译:纳米CMOS和SOI器件中的工艺变化和随机掺杂引起的阈值电压波动
机译:应力/应变映射在先进CMOS工艺技术节点中的作用
机译:低功耗模拟到高级CMOS技术节点中的数字转换器
机译:采用22 nm节点CMOS技术的SiH4和B2H6前体的ALD W填充金属功能的pMOSFET
机译:过程变化效应,金属栅极工作函数波动和新兴CMOS技术中的随机掺杂波动