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Quantitative depth distribution analysis of elements in high alloy steel using MCs+-SIMS approach

机译:MCS + -SIMS方法高合金钢元素的定量深度分布分析

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Elemental composition analysis in alloy samples using secondary ion mass spectrometry (SIMS) suffers from matrix effects which hamper the analytical results. These matrix effects arise due to numerous factors like change in surface work function due to primary ion beam implantation, presence of reactive chemical species in the samples or on the sample surface, sample composition, chamber pressure etc. which changes the ionization probability of secondary ion species and hence produces non-linear effects in the production of secondary ions. In order to minimize these effects, Cs+ primary ion beam in conjunction with MCs+ (M being the element of interest) secondary ion monitoring (MCs+-SIMS) approach has been used. The MCs+-SIMS approach has been extensively used for quantitative depth distribution analysis in semiconductor samples but limited reports are available for the analysis of alloys sample. In the present work, the MCs+-SIMS approach has been utilized to determine the chemical composition and quantitative depth distribution of multiple elements (C, Si, Ni, Mn, Cr, Co, Mo and Fe) in high alloy steel samples. Quantitative depth distribution analysis revealed a non-homogenous distribution of elements on the steel surface which can be due to the presence of surface oxide layers. The minor and major constituents such as Cr, Mo; Mn, Ni; and Si; were determined with relative error of 2%, 6% and 5%, respectively. Surface distribution analyses of these elements were also carried out using both Cs+ and O-2(+) primary ion beams. An interesting and contrasting feature has been observed for surface distribution analysis carried out with MCs+ as compared to M+ secondary ion detection mode. It was observed that the surface distribution patterns of non-homogenous elements showed homogenous distribution patterns in case of MCs+ secondary ion monitoring approach. This anomaly can be attributed to the difference in formation mechanism of MCs+ and M+ secondary ions. (C) 2018
机译:使用二次离子质谱法(SIMS)的合金样品中的元素组成分析遭受了妨碍分析结果的基质效应。由于主要离子束植入引起的表面功函数的变化,样品中的反应化学物质或样品表面,样品组合物,腔室压力等的存在,因此这些基质效应产生了许多因素,其改变了二次离子的电离概率的样品表面,样品组合物,腔室压力等。物种和因此在二次离子的生产中产生非线性效应。为了使这些效果最小化,已经使用CS +主离子束与MCS +(M是感兴趣的元素)二次离子监测(MCS + -SIMS)方法。 MCS + -SIMS方法已广泛用于半导体样本中的定​​量深度分布分析,但有限的报告可用于分析合金样品。在本作工作中,已经利用MCS + -SIMS方法来确定高合金钢样品中的多元素(C,Si,Ni,Mn,Cr,Co,Mo和Fe)的化学成分和定量深度分布。定量深度分布分析显示钢表面上的元素的非均匀分布,这可能是由于表面氧化物层的存在。未成年人和主要的成员,如Cr,Mo; Mn,Ni;和si;用相对误差分别测定2%,6%和5%的相对误差。使用CS +和O-2(+)主离子束也进行这些元素的表面分布分析。与M +二次离子检测模式相比,对于使用MCS +进行的表面分布分析,已经观察到有趣和对比特征。观察到,在MCS +二次离子监测方法的情况下,非均匀元素的表面分布图案显示出均匀的分布图案。该异常可归因于MCS +和M +二次离子的形成机制差异。 (c)2018年

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