Top Gate Planner Carbon Nanotube Field Effect Transistor using Nanohub

摘要

A study of I_d versus V_(gs) characteristic of the top gate planner CNTFETs for different diameter and length of carbon nanotube is done and simulation of the same is performed over Nanohub. The characteristic curve is plotted for three cases: (i) (10, 0) CNT with channel length 10nm and gate length 8nm, (ii) (10,0) CNT with channel length 15nm and gate length 12nm and (iii) (13,0) CNT with channel length 10nm and gate length 8nm. It is found that CNTFET is capable of delivering three to four times higher drive currents than the Si MOSFETs at an overdrive of 1 V, and has about four times higher transconductance. Thus, for future applications and performance point of view, CNTFETs can be a better choice than a conventional MOSFET.