Automated instrumentation for nonequilibrium capacitance-voltage measurements at a semiconductor-electrolyte interface

摘要

An apparatus for measuring nonequilibrium capacitance-voltage characteristics in semiconductor structures with electrolytic contacts is described. A pulse CV method was used in which a space-charge region in the deep-depletion mode was created via application of a bias-voltage pulse. Measuring the capacitance in a nonequilibrium mode makes it possible to avoid the formation of an inverse layer in an electrolyte-semiconductor system, whose presence leads to overestimation of the results of measuring the impurity concentration in narrow-band semiconductors. The possibility of applying this technique to measurements of the impurity concentration in weakly doped n-InAs is shown.