Nondestructive and repeatable capacitance-voltage and current-voltage measurements across the oxide/electrolyte interface by UHV-electrochemistry approach

摘要

We attempt measurements of nondestructive and repeatable current-voltage (Ⅰ-Ⅴ) and capacitance-voltage (C-V) characteristics across the oxide/electrolyte interface for single-crystal SrTiO_3 (STO) and its homoepitaxial films as a model system by the ultrahigh-vacuum (UHV)-electrochemistry approach. Direct comparisons of these characteristics before and after the growth of films and/or chemical treatments allow us to more reliably obtain some insights on the interface and bulk crystal quality of STO, in terms of which the irreversible surface reforming process as well as the frequency dependence of C will be discussed in this paper.