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首页> 外文期刊>Annual Review of Physical Chemistry >Charge Transfer Dynamics from Photoexcited Semiconductor Quantum Dots
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Charge Transfer Dynamics from Photoexcited Semiconductor Quantum Dots

机译:来自光屏蔽的半导体量子点的电荷传递动态

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摘要

Understanding photoinduced charge transfer from nanomaterials is essential to the many applications of these materials. This review summarizes recent progress in understanding charge transfer from quantum dots (QDs), an ideal model system for investigating fundamental charge transfer properties of low-dimensional quantum-confined nanomaterials. We first discuss charge transfer from QDs to weakly coupled acceptors within the framework of Marcus nonadiabatic electron transfer (ET) theory, focusing on the dependence of ET rates on reorganization energy, electronic coupling, and driving force. Because of the strong electron-hole interaction, we show that ET from QDs should be described by the Auger-assisted ET model, which is significantly different from ET between molecules or from bulk semiconductor electrodes. For strongly quantum-confined QDs on semiconductor surfaces, the coupling can fall within the strong coupling limit, in which case the donor-acceptor interaction and ET properties can be described by the Newns-Anderson model of chemisorption. We also briefly discuss recent progress in controlling charge transfer properties in quantum-confined nanoheterostructures through wavefunction engineering and multiple exciton dissociation. Finally, we identify a few key areas for further research.
机译:了解从纳米材料的光引管电荷转移对于这些材料的许多应用至关重要。本综述总结了了解从量子点(QDS)的识别电荷转移的最新进展,是一种理想的模型系统,用于研究低维量子限制纳米材料的基本电荷转移性能。我们首先讨论从QDS从QDS到弱耦合的受护者在Marcus非等压电子转移(ET)理论的框架内,专注于ET率对重组能量,电子耦合和驱动力的依赖性。由于强肌孔相互作用,我们表明ET来自QD的ET应该由螺旋钻辅助ET模型描述,其与分子之间的ET和来自块状半导体电极显着不同。对于在半导体表面上的强量子限制QDS,耦合可以落入强耦合极限内,在这种情况下,供体 - 受体相互作用和ET性能可以由纽带 - 安德森的化学研制模型描述。我们还简要讨论了通过波飞向工程和多个激子解离控制量子局限性纳米能源结构中的电荷转移性能的最新进展。最后,我们确定了一些进一步研究的关键领域。

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