SITE SELECTIVE METAL PHOTO DEPOSITION ENABLES CONTROLLED FABRICATION OF COLLOIDAL SEMICONDUCTOR-METAL HYBRID HETEROSTRUCTURES

摘要

With advances in semiconductor industry in the last decade, interest in the synthesis of colloidal semiconductor-metal hybrid nanostructures is constantly increasing. The challenge is to have controlled metal deposition on the substrate. The current existing methods use laser spot irradiation to gain control over metal deposition. This process is highly expensive as it requires expensive equipment, thus increasing the initial and operational costs of the process. This method also gives low yield. The high-energy intensity of the laser holds the potential to change the structure of the metal deposit, which is not desirable. The need is to devise a method to deposit metal on the substrate with enhanced control on the metal deposition rate and with zero changes in metal deposit structure. A team of researchers at Ames Laboratory have developed a novel reliable process to meet the above mentioned need of the industry. The method involves illumination of large areas. This provides a good control over the deposition site.