首页> 外国专利> Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

机译:通过位置选择性金属光沉积可控制地制造半导体-金属杂化纳米异质结构

摘要

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.
机译:公开了一种合成胶体半导体-金属杂化结构的方法。该方法包括将半导体纳米棒溶解在溶剂中以形成纳米棒溶液,以及将前体溶液添加到纳米棒溶液中。前体溶液包含金属。该方法进一步包括用特定波长的光照射组合的前体和纳米棒溶液。照明导致前驱体溶液中的金属沉积到半导体纳米棒的表面上。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号