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A 0.65V, linearized cascade UWB LNA by application of modified derivative superposition technique in 130nm CMOS technology

机译:通过在130nm CMOS技术中的改性衍生物叠加技术的应用,0.65V,线性化级联UWB LNA

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摘要

In this paper, a low-voltage linearized ultra-wideband (UWB) low noise amplifier (LNA) is presented. The core of the proposed circuit is a two-stage cascade structure which is forward body biased to operate under a low supply voltage. In the proposed topology the low linearity drawback of the cascade structure is improved by exploiting the modified derivative superposition (MDS) technique at the second stage. The MDS technique consists of an auxiliary transistor biased in the moderate inversion region paralleled with the main transistor biased in the strong inversion region and two degeneration inductors connected at the source node of the main and auxiliary transistors which altogether aim to cancel out contributions of both the second and third-order non-linearity coefficients on the third-order input intercept point (IIP3). Applying MDS technique on cascade structure has the advantage to have both high linearity and low supply voltage features in an UWB LNA. Simulated at post-layout level in 130 nm RFCMOS TSMC technology, the structure features a 13.8dBm IIP3, consuming only 11.2mW from a low supply voltage of 0.65V. The proposed LNA achieves a relatively flat gain of 12 +/- 1dB, noise figure of 1.8-4dB, and return power loss less than -10dB.
机译:本文提出了一种低压线性化超宽带(UWB)低噪声放大器(LNA)。所提出的电路的核心是两级级联结构,该结构是在低电源电压下偏置的前体偏置。在所提出的拓扑结构中,通过利用第二阶段的改进的衍生物叠加(MDS)技术来改善级联结构的低线性度缺陷。 MDS技术包括在与主晶体管偏置在强倒置区域中的主晶体管的中等反转区域中偏置的辅助晶体管,以及连接在主且辅助晶体管的源极节点的两个变性电感器中,其旨在抵消两者的贡献三阶输入截距点上的第二和三阶非线性系数(IIP3)。在级联结构上应用MDS技术具有UWB LNA中具有高线性度和低电源电压特征的优点。在130nm RFCMOS TSMC技术的后布局水平上模拟,该结构具有13.8dBm的IIP3,仅耗11.2mW,低电源电压为0.65V。所提出的LNA实现了12 +/- 1dB,噪声系数的相对平坦的增益,噪声系数为1.8-4dB,并且返回功率损耗小于-10dB。

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