...
机译:退火处理对CEO2 / TiO2双层电阻切换存储器均匀性的影响
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Bahauddin Zakariya Univ Dept Phys Thin Films Lab Multan 60800 Pakistan;
Bahauddin Zakariya Univ Dept Phys Thin Films Lab Multan 60800 Pakistan;
Bahauddin Zakariya Univ Dept Phys Thin Films Lab Multan 60800 Pakistan;
Univ Faisalabad Govt Coll Dept Phys Faisalabad 38000 Pakistan;
Bahauddin Zakariya Univ Inst Chem Sci Multan 60800 Pakistan;
Bahauddin Zakariya Univ Dept Phys Thin Films Lab Multan 60800 Pakistan;
Bahauddin Zakariya Univ Dept Phys Thin Films Lab Multan 60800 Pakistan;
Sun Yat Sen Univ Sch Mat Sci &
Engn State Key Lab Optoelect Mat &
Technol Guangzhou 510275 Guangdong Peoples R China;
Bilayer CeO2/TiO2 films; Effect of annealing; Uniformity; Resistive switching; RRAM;
机译:退火处理对CEO2 / TiO2双层电阻切换存储器均匀性的影响
机译:AIO_X层对双层基于HfO_x的电阻式随机存取存储设备的电阻切换特性和设备间一致性的影响
机译:双层基于二氧化铈的电阻式随机存取存储设备的双极电阻式开关的性能稳定性和功能可靠性
机译:SiO_x / HfO_x双层电阻开关存储器件的特性
机译:电阻式切换存储器和可重配置设备。
机译:通过更改顶部电极材料来改善三层CeO2 / Ti / CeO2电阻开关器件的耐久性和周期间一致性
机译:通过更换顶部电极材料的三层CEO2 / TI / CEO2电阻开关装置的耐力和循环到循环均匀性改善