Induced epitaxy for growth of aligned indium nitride nano- and microrods

摘要

Wurtzite indium nitride nano- and microscale crystals were grown on c-plane sapphire substrates in an oxide-, template-, and catalyst-free chemical vapor deposition reactor using the halogen-based precursor InCl_3. The impact of growth temperature, In flux, and ammonia flow on the InN microstructure and epitaxial alignment was evaluated. Increased growth temperature resulted in nanorods with high-aspect ratio and enhanced epitaxial alignment of InN(001)//Al_2O_3(001). Faceting exhibited by our growth product confirmed that simple bond-counting does not determine the exhibited planes and phenomena such as dipole-dipole attractions and surface diffusion determined crystal morphology under certain conditions. An increase in growth product with increased In flux indicated our growths are carried out under heavily N-rich conditions with V/III ～ 10~4. These results provide a stronger understanding of the growth mechanisms of this unique semiconductor.