Growth of builk, polycrystalline gallium nitride and indium nitride at sub-atmospheric pressure

摘要

Bulk, polycrystalline gallium nitride was crystallized at sub-stmospheric pressures by saturating pure liquid gallium with active nitrogen from both ECR and ball plasma microswave sources. Well faceted, polycrystalline indium nitride has been synthesized by the same method. The plasma is far from equilibrium and provides an extremely high chemical potential of nitrogen. This method of saturating the melt circumvents the high static pressures of molecular nitrogen used in conventional builk synthesis. Growth from Ga/In melts can provide greater nitrogen solubility and also can give infrmation about phase relationshipls in the Ga/In/N system.