Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO_3/SrTiO_3 Interface Structures

摘要

The 2D conducting gas that forms at the interface between the two insulators LaAlO_3 (LAO) and SrTiO_3 (STO) has garnered a lot of attention due to wide variety of physical phenomena that it exhibits, including strong spin–orbit coupling, superconductivity, magnetism, and localization effects,[13] among others. From the earliest studies, it has been well established that the conditions during film growth or the post-growth treatment of samples can have a substantial effect on the properties of the interface. In particular, the amount of oxygen vacancies introduced during growth or through post-growth treatment can change the conductance of the LAO/STO interface by orders of magnitude.