Features of the Surface Region of the Semiconductor Structure Formed by Metal-Assisted Chemical Etching of Single-Crystal Silicon

摘要

The surface region of the semiconductor structure containing a porous layer formed by metal-assisted etching of a single-crystal silicon substrate is studied by scanning electron microscopy, Raman spectroscopy, and capacitance-voltage characteristic measurements. A donor-depleted layer is detected within the porous film near its outer surface.