Rectifying resistance-switching behaviour of Ag/SBTO/STMO/-Si heterostructure films

摘要

The (SBTO/STMO) heterostructure films were prepared on substrates by sol-gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/ exhibited a bipolar, remarkable resistance-switching characteristic, and . More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach at . The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current (SCLC).