...
首页> 外文期刊>RSC Advances >Large-area two-dimensional bismuth selenide crystals synthesized by solution-based control of the nucleation environment
【24h】

Large-area two-dimensional bismuth selenide crystals synthesized by solution-based control of the nucleation environment

机译:通过基于溶液的核心环境控制合成的大面积二维铋硒化晶体

获取原文
获取原文并翻译 | 示例

摘要

Two-dimensional (2D) Bi2Se3 is one of the most studied nanomaterials in recent years because of its fascinating electronic properties. However, previous synthesis methods, especially solution-based methods, were not capable of growing laterally large 2D Bi2Se3 crystals (mostly up to a few micrometers), and thus its real application and in-depth study was practically impossible. In this communication, we report a simple, reliable two-step method to synthesize large (20-50 mm in the lateral diameter and 10-15 nm in the thickness) disks of Bi2Se3 in the presence of ethylenediamine-tetraacetic acid (EDTA) and chloride ion, where EDTA acts as a complexing agent with bismuth(III). Depending on the growth conditions, we obtained 2D Bi2Se3 crystals having either a flat or spiral surface. We have thoroughly characterized the morphology, crystal structures, and electrical properties of these new disks, and we also discussed a possible growth mechanism based on the control over the surface chemistry and the nucleation stage.
机译:二维(2D)Bi2Se3是近年来最具学习的纳米材料之一,因为其令人迷人的电子特性。然而,先前的合成方法,特别是基于溶液的方法,不能生长横向大的2D Bi2Se3晶体(大部分高达几微米),因此其实际应用和深入研究几乎是不可能的。在这种通信中,我们在乙二胺 - 四乙酸(EDTA)存在下,在乙二胺 - 四乙酸(EDTA)的存在下,在乙二胺 - 四乙酸(EDTA)和氯离子,EDTA用作铋(III)的络合剂。根据生长条件,我们获得了具有平坦或螺旋表面的2D Bi2Se3晶体。我们已经彻底地表征了这些新磁盘的形态,晶体结构和电气性质,我们还讨论了基于对表面化学和成核阶段的控制的可能生长机制。

著录项

  • 来源
    《RSC Advances 》 |2016年第108期| 共4页
  • 作者单位

    Inst for Basic Sci Korea Ctr Artificial Low Dimens Elect Syst Pohang 37673 South Korea;

    Inst for Basic Sci Korea Ctr Artificial Low Dimens Elect Syst Pohang 37673 South Korea;

    Inst for Basic Sci Korea Ctr Artificial Low Dimens Elect Syst Pohang 37673 South Korea;

    Inst for Basic Sci Korea Ctr Artificial Low Dimens Elect Syst Pohang 37673 South Korea;

    Inst for Basic Sci Korea Ctr Artificial Low Dimens Elect Syst Pohang 37673 South Korea;

    Inst for Basic Sci Korea Ctr Artificial Low Dimens Elect Syst Pohang 37673 South Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学 ;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号