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ELECTROCHEMICAL REFINING OF INDIUM IN THIN LAYERS OF CHLORIDE MELTS

机译:薄层氯化物薄层铟的电化学精制

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摘要

High purity indium with total content of impurities 10~(-3) -10~(-6) percent is required for the application in radio electronics, semiconductors, special alloys. For the refining of crude indium produced by means of solution cementation various procedures are used in particular electrolytic refining in salt low-melting point melts that has been successfully developing lately. A fundamentally new design of thin layer electrolyzer has been developed and implemented to a commercial scale The optimal electrolysis conditions: temperature 220-230 deg C; cathode current density 0.2-0.4 A/cm~2; discharge of cathode metal and additional feed of anode metal - once per day. Bath efficiency 4-5 kg/day. Quantity of electrolyte 30 g.
机译:在无线电电子器件,半导体,特殊合金中,应用杂质总含量为杂质10〜(-3)-10〜(-6)%的高纯度铟。 对于通过溶液胶结产生的粗铟精炼,各种方法特别用于盐低熔点熔体的电解精制,该熔体最近成功地发展。 基本上新的薄层电解器设计已经开发并实施了商业规模的最佳电解条件:温度220-230℃; 阴极电流密度0.2-0.4A / cm〜2; 放电阴极金属和阳极金属的额外饲料 - 每天一次。 浴效4-5千克/天。 电解质30g的量。

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