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ELECTROCHEMICAL REFINING OF INDIUM IN THIN LAYERS OF CHLORIDE MELTS

机译:氯化物熔体薄层中铟的电化学精制

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摘要

High purity indium with total content of impurities 10~(-3) -10~(-6) percent is required for the application in radio electronics, semiconductors, special alloys. For the refining of crude indium produced by means of solution cementation various procedures are used in particular electrolytic refining in salt low-melting point melts that has been successfully developing lately. A fundamentally new design of thin layer electrolyzer has been developed and implemented to a commercial scale The optimal electrolysis conditions: temperature 220-230 deg C; cathode current density 0.2-0.4 A/cm~2; discharge of cathode metal and additional feed of anode metal - once per day. Bath efficiency 4-5 kg/day. Quantity of electrolyte 30 g.
机译:在无线电电子,半导体,特殊合金中的应用需要具有总杂质含量10%〜(-3)%-10%(-6%)的高纯度铟。为了精炼通过溶液胶结法生产的粗铟,特别是在最近已成功开发的盐低熔点熔体中,采用了各种方法,特别是电解精炼。薄层电解槽的根本全新设计已经开发并实现了商业规模。阴极电流密度0.2-0.4A / cm〜2;阴极金属的放电和阳极金属的额外进料-每天一次。浴效率为4-5公斤/天。电解液量30克。

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