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Observations of polarization switching processes in ferroelectric Pb(Zr,Ti)O{sub}3 thin films using piezoresponse scanning force microscopy

机译:使用压电响应扫描力显微镜的铁电PB(Zr,Ti)O {Sub} 3薄膜偏振切换过程的观察

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Polarization switching processes in epitaxial Pb (Zr,Ti)O{sub}3 (PZT) thin films grown on SrRuO{sub}3/SrTiO{sub}3 (100) were observed using piezoresponse scanning force microscopy (PFM). PFM observations were carried out directly on the PZT surface and with and on Pt top electrodes. XRD patterns exhibited that PZT thin film had only 180°domains because of a tetragonal structure and completely (001)-orientation. From PFM observations directly on PZT film, it was found that domain wall velocity in the vertical direction was estimated 89m/s. PFM observations with and on the top electrode revealed that the polarization switching processes were dependent on the switching pulse voltage. At lower switching pulse voltage regions (~1.5V{sub}c), the polarization switching occurred from only the latent nuclei. On the other hand, at higher switching pulse voltage (>2V{sub}c), the new nucleations during switching period were observed.
机译:使用压电响应扫描力显微镜(PFM)观察在Srruo {sub} 3 / srtio {sub} 3(100)上生长的外延Pb(zr,ti)o {sub} 3(pzt)薄膜的偏振切换过程。 PFM观察分析直接在PZT表面和PT顶部电极上进行。 由于四边形结构和完全(001),XRD薄膜表现出PZT薄膜仅具有180°域。 从PFM观察直接在PZT薄膜上,发现垂直方向上的畴壁速度估计为89m / s。 具有和在顶部电极上的PFM观察显示,偏振切换过程取决于开关脉冲电压。 在较低的开关脉冲电压区域(〜1.5V {sub} C),偏振切换仅发生在潜在核。 另一方面,在更高的开关脉冲电压(> 2V {Sub} C),观察到在切换时段期间的新成核。

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