Exploring the potential of remote plasma sputtering for the production of L1(0) ordered FePt thin films

摘要

Lowering the temperature at which the desirable L1(0) phase forms in FePt thin films is a key requirement in the development of next generation high-density data storage media and spintronic devices. Remote plasma sputtering offers a higher degree of control over the sputtering parameters, allowing the properties of films to be tailored, and potentially can affect the ordering kinetics of the L1(0) phase of FePt. Here, we report a comprehensive study of FePt thin films deposited under a range of temperatures and sputtering conditions. X-ray diffraction and magnetometry investigations show that whilst FePt thin films ordered in the L1(0) phase with high perpendicular anisotropy can be produced using this technique, there is no significant reduction in the required ordering temperature compared with films produced using conventional DC sputtering. Optimally ordered L1(0) FePt films were fabricated when the film was deposited at a substrate temperature of 200 degrees C, followed by post annealing at 750 degrees C.