Robust topological surface transport with weak localization bulk channels in polycrystalline Bi2Te3 films

摘要

Bi2Te3 polycrystalline topological insulator films have provided an attractive material platform to investigate topological insulator properties and created new opportunities for novel magneto-electronic device applications. In order to confirm that Bi2Te3 polycrystalline film has a robust topological surface state, and whether such surface Dirac fermions can be protected from localization in transport, we performed a systematic transport measurement and analysis based on a Sn-doped Bi2Te3 polycrystalline film with Hall configuration electrodes. We demonstrated that the electron-electron interaction effect is very strong, which can help realize an insulating ground state. The surface state of the film always exhibits stable weak anti-localization features despite the presence of many structural defects and non-magnetic doping, and the Hall resistance can present a significant nonlinear dependence on magnetic fields. These two characteristics provide significant experimental evidence that the polycrystalline film has a robust topological surface state, and that such surface electrons cannot be localized. Owing to the lack of topological protection, the weak anti-localization transport of bulk electrons cannot be guaranteed, and weak localization behavior may appear in the bulk channels. These results verify that robust topological surface transport in topological insulator polycrystalline films can be accompanied by weak localization bulk channels.