机译:用于相变存储器应用的高质量溅射层状硫属化合物薄膜
Natl Inst Adv Ind Sci &
Technol Nanoelect Res Inst Tsukuba Cent 5 1-1-1 Higashi Tsukuba Ibaraki 3058565 Japan;
Natl Inst Adv Ind Sci &
Technol Nanoelect Res Inst Tsukuba Cent 5 1-1-1 Higashi Tsukuba Ibaraki 3058565 Japan;
Natl Inst Adv Ind Sci &
Technol Nanoelect Res Inst Tsukuba Cent 5 1-1-1 Higashi Tsukuba Ibaraki 3058565 Japan;
Natl Inst Adv Ind Sci &
Technol Nanoelect Res Inst Tsukuba Cent 5 1-1-1 Higashi Tsukuba Ibaraki 3058565 Japan;
Natl Inst Adv Ind Sci &
Technol Nanoelect Res Inst Tsukuba Cent 5 1-1-1 Higashi Tsukuba Ibaraki 3058565 Japan;
Natl Inst Adv Ind Sci &
Technol Nanoelect Res Inst Tsukuba Cent 5 1-1-1 Higashi Tsukuba Ibaraki 3058565 Japan;
Tohoku Univ Grad Sch Engn Dept Mat Sci 6-6-11 Aoba Yama Sendai Miyagi 9808579 Japan;
Tohoku Univ Grad Sch Engn Dept Mat Sci 6-6-11 Aoba Yama Sendai Miyagi 9808579 Japan;
Univ Tsukuba Fac Pure &
Appl Sci Dept Appl Phys 1-1-1 Tennodai Tsukuba Ibaraki 3058573 Japan;
Univ Cambridge Dept Engn 9 JJ Thomson Ave Cambridge CB3 0FA England;
sputtering; chalcogenides; layered materials; phase change memory; topological materials;
机译:用于相变存储器应用的高质量溅射层状硫属化合物薄膜
机译:用于相变存储应用的Ge22 sub> Sb22 sub> Te56 sub>和Sb-过量Ge15 sub> Sb47 sub> Te38 sub>硫族化物薄膜的表征
机译:具有双层硫族化物薄膜(Ge_2Sb_2Te_5和Sb_2Te_3)的相变存储单元的多级数据存储特性
机译:相变存储器(PCM)应用的某些碲基硫属化物薄膜电切换行为的对比研究
机译:层状硫属化物相变存储器件。
机译:由硫族化物相变材料引起的具有薄膜共振的全息图像生成
机译:三元和层状硫族化物相变存储器件的电开关特性