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Process for physical vapor deposition of a chalcogenide material layer and chamber for physical vapor deposition of a chalcogenide material layer of a phase change memory device
Process for physical vapor deposition of a chalcogenide material layer and chamber for physical vapor deposition of a chalcogenide material layer of a phase change memory device
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机译:硫属化物材料层的物理气相沉积的方法和相变存储器件的硫属化物材料层的物理气相沉积的室
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摘要
A method for depositing a chalcogenide layer in a phase change memory, whereby a chalcogenide layer is deposited by physical vapor deposition in a deposition chamber, having a collimator. The collimator is formed by a holed disk arranged in a deposition area delimited by the chamber walls and the chamber cover. The target is biased by a pulsed voltage to avoid charging and arching. The method is used to manufacture a phase change memory cell, whereby a resistive heater element is formed in a dielectric layer, a mold layer is formed over the dielectric layer; an aperture is formed in the mold layer over the resistive heater element; a chalcogenide layer is conformally deposited in the aperture to define a phase change portion; and a select element is formed in electrical contact with the phase change portion.
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