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Analysis of Laser Injection Condition and Electrical Properties in Local BSF for Laser Fired Contact c-Si Solar Cell Applications

机译:激光触点C-Si太阳能电池应用的局部BSF中激光注射条件和电气性能分析

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摘要

A crystalline silicon (c-Si) local-back-contact (LBC) solar cell for which a laser-condition-optimized surface-recombination velocity (SRV), a contact resistance (R-c), and local back surface fields (LBSFs) were utilized is reported. The effect of the laser condition on the rear-side electrical properties of the laser-fired LBC solar cell was studied. The Nd: YAG-laser (1064-nm wavelength) power and frequency were varied to obtain LBSF values with a lower contact resistance. A 10-kHz laser power of 44 mW resulted in an R-c of 0.125 ohms with an LBSF thickness of 2.09 mu m and a higher open-circuit voltage (V-OC) of 642 mV.
机译:晶体硅(C-Si)局部背触点(LBC)太阳能电池,用于激光条件优化的表面重组速度(SRV),接触电阻(RC)和局部背面(LBSF)是 报告了利用。 研究了激光条件对激光烧制的LBC太阳能电池后侧电性能的影响。 ND:YAG激光(1064-nm波长)功率和频率变化,得到具有较低接触电阻的LBSF值。 44 MW的10 kHz激光功率导致R-C为0.125欧姆,LBSF厚度为2.09 mu m,更高的开路电压(V-oc)为642 mV。

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