Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing

摘要

In this study, inkjet-printed zinc tin oxide:Cl (ZTO:Cl) thin films were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and all the films were annealed at temperatures ranging from 100 degrees C to 600 degrees C. XPS analysis showed that the formation of metal-oxide bonds in the films was complete with annealing temperatures at or above 500 degrees C. Furthermore, inkjet-printed thin film transistors (TFTs) were examined using scanning electron microscopy and current-voltage characteristic measurements. The ZTO:Cl TFTs performed best when annealed at 500 degrees C. The average carrier mobility and the on/off ratio were found to be 2.71 cm(2)/V s and 1.82x10(7), respectively.