首页> 外文期刊>Journal of Electronic Materials >Dielectric, Resistive and Conduction Characteristics of Lead-Free Complex Perovskite Electro-Ceramic: (Bi1/2K1/2)(Zn1/2W1/2)O-3
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Dielectric, Resistive and Conduction Characteristics of Lead-Free Complex Perovskite Electro-Ceramic: (Bi1/2K1/2)(Zn1/2W1/2)O-3

机译:无铅复合钙钛矿电陶瓷电介质,电阻和传导特性:(BI1 / 2K1 / 2)(ZN1 / 2W1 / 2)O-3

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摘要

We have investigated the electric field and temperature dependence of dielectric, impedance and conduction characteristics of a lead-free complex distorted perovskite (Bi1/2K1/2)(Zn1/2W1/2)O-3 ceramic. The material was synthesized by using a standard high-temperature ceramic technology. Analysis of x-ray diffraction data and patterns collected at room temperature has provided the information on the formation of a distorted perovskite with an orthorhombic crystal system. Dielectric and impedance spectroscopy techniques have been utilized to study the effect of frequency and temperature on the dielectric, impedance and transport (conduction) characteristics of the compound. The mechanism of dielectric relaxation phenomenon in the compound has been analyzed using the dielectric and impedance data collected in a wide range of temperature (100-500 degrees C) and frequency (1kHz-1MHz). Analysis of temperature-frequency-dependent Nyquist (impedance) plots has shown an important role of grains (bulk) and grain boundaries in the capacitive and resistive characteristics of the material. Based on the frequency-dependent electrical modulus and impedance data of the compound, the dielectric relaxation of non-Debye type has been suggested. The nature of the temperature- and frequency-dependence of ac conductivity of the compound follows Joncher's power law. The fabricated compound has some important dielectric characteristics which can potentially be used for electronic devices.
机译:我们研究了无铅复合复合物钙钛矿(Bi1 / 2K1 / 2)(Zn1 / 2W1 / 2)O-3陶瓷的介电,阻抗和传导特性的电场和温度依赖性。通过使用标准的高温陶瓷技术合成材料。在室温下收集的X射线衍射数据和图案的分析提供了关于形成具有正晶晶体系统的变形钙钛矿的信息。已经利用介质和阻抗光谱技术研究频率和温度对化合物的电介质,阻抗和传输(传送)特性的影响。使用在宽范围(100-500摄氏度)和频率(1kHz-1MHz)中收集的电介质和阻抗数据分析化合物中介电弛豫现象的机理。温度依赖性奈奎斯特(阻抗)图的分析显示了谷物(散装)和晶界在材料的电容和电阻特性中的重要作用。基于化合物的频率依赖电模量和阻抗数据,已经提出了非去德义型的介电松弛。复合物的AC电导率的温度和频率依赖性的性质遵循Joncher的权力法。制造的化合物具有一些重要的介电特性,其可能用于电子设备。

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