Field emission of graphene oxide decorated ZnO nanorods grown on Fe alloy substrates
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Field emission of graphene oxide decorated ZnO nanorods grown on Fe alloy substrates

机译:石油氧化石墨烯氧化物的场发射在Fe合金基材上生长的ZnO纳米棒

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AbstractGraphene oxides (GO) are decorated on the top surface of ZnO nanorods (NRs) grown on Fe alloy substrates for efficient field emission. The GO decorated ZnO NRs acting as cold electron emitters exhibit excellent field emission performance with the turn-on fieldEtoas low as 1.63?V/μm and the threshold fieldEthrdown to 3.12?V/μm. ZnO NRs grown on the alloy substrates have a low interfacial resistance and intend to enhance electrical conduction. A schottky contact of Fe-ZnO and matched Fermi levels of ZnO-GO interface contribute to the enhanced current emission efficiency. Besides, some nanometer-scaled sharp protrusions have been formed in the GO sheets, and GO itself owns abundant C-O-C oxygen functional groups that also help to improve the field emission current. A straight line Fowler-Nordheim plot of the field emission current from the emitter is obtained and the effective work function for the decorated GO sheets is calculated from the slope with a value below 1.5?eV. Finally, field emission mechanism of the GO decorated ZnO NRs has been proposed. This work may help the development of the practical electron sources and advanced optronic devices based on GO field emitters.Graphical abstractDisplay OmittedHighlights?A matched Fermi levels of ZnO-GO interface contribute to electron transport.?GO decoration increases the number of nanometer-scaled emission sites.?2D GO decrease the potential barrier during the field emission process.?An effective work function of GO decorated on ZnO NRs decreases.]]>
机译:<![CDATA [ 抽象 石墨烯氧化物(Go)装饰在Fe合金基板上的ZnO纳米棒(NRS)的顶表面上装饰有效的场发射。作为冷电子发射器的Go装饰的ZnO NRS表现出优异的场发射性能,开启场 e < / ce:斜体> 低至1.63?v / mm和阈值字段 e thr down至3.12?v / mm。在合金基板上生长的ZnO NRS具有低界面抗性并打算增强电导。 Fe-ZnO和Fireded Fermi界面的肖特基联系ZnO-Go接口有助于增强的电流发射效率。此外,在Go纸上形成了一些纳米缩放的尖锐突起,并自身拥有丰富的C-O-C氧官能团,也有助于改善场发射电流。从发射器获得场发射电流的直线禽流锤 - Nordheim图,并且从斜坡计算装饰窗单的有效功函数,值低于1.5的斜率。最后,已经提出了Go装饰ZnO NRS的现场排放机制。这项工作可以帮助基于Go Field发射器的实用电子源和先进的Optronic器件的开发。 图形抽象 显示省略 亮点 匹配的费米级Zno-Go接口有助于t o电子传输。 Go装饰增加了纳米缩放的发射站点的数量。 2D在现场发射过程中降低潜在屏障。 在ZnO NRS上装饰的有效工作功能减少。< / ce:para> ]]>

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