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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Interplay of composition and anisotropy on evolution of microstructural, static and dynamic magnetic properties of CoFeB thin films on annealing
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Interplay of composition and anisotropy on evolution of microstructural, static and dynamic magnetic properties of CoFeB thin films on annealing

机译:构成和各向异性的相互作用对芯片薄膜在退火上的微观结构,静态和动态磁性性能的演变

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The crystallization of CoFeB electrode is essential for achieving high tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) with MgO barrier. In this study, we systematically investigated the influence of annealing on the structural and magnetic properties of CoFeB (23?nm) thin films using X-ray diffraction (XRD), magnetization (M) vs. magnetic field (H) and ferromagnetic resonance (FMR) measurements. The variations in composition and uniaxial magnetic anisotropy (UMA) of as-deposited CoFeB thin films results in a different crystalline state on annealing. It was found that the partial crystallization takes place for CoFeB compositions with high Boron content and exhibiting large UMA. This initial stage of crystallization is associated with the quick release of stress and will result in low coercivity, smaller crystallite size and a decrease in uniaxial anisotropy which will eventually lead to lower magnetic damping. However, on complete crystallization for other compositions with the formation of bcc-CoFe (110) phase, both the crystallite size and coercivity increases and cubic anisotropy emerge which results in very enhanced damping. The FMR linewidth has non-linear frequency dependence which gives direct evidence that relaxation is not exclusively governed by Gilbert damping, but it is also important to consider the contribution from two-magnon scattering (TMS). The TMS dominates the damping process in crystallized films and is mainly caused by the anisotropy dispersion created due to the grain growth. Thus, the work connects the change in microstructure and anisotropy to the magnetization dynamics, in particular, the FMR linewidth.
机译:CoFeB电极的结晶对于实现具有MgO屏障的磁隧道结(MTJ)的高隧道磁阻(TMR)是必不可少的。在这项研究中,我们系统地研究了使用X射线衍射(XRD),磁化(M)与磁场(H)和铁磁共振(H)和铁磁共振(H)和铁磁共振(H)和铁磁共振(H)和铁磁共振(H)和铁磁共振(H)和铁磁共振()的影响对CoFeB(23μm)薄膜的结构和磁性的影响。 FMR)测量。沉积的CoFeB薄膜的组合物和单轴磁各向异性(UMA)的变化导致退火上的不同结晶状态。发现,部分结晶发生用于具有高硼含量并表现出大UMA的CoFeB组合物。这种结晶的初始阶段与应激的快速释放有关,并且将导致低矫顽力,较小的微晶尺寸和单轴各向异性的减少,最终导致较低的磁阻。然而,在具有形成BCC-COFE(110)相的其他组合物的完全结晶上,微晶尺寸和矫顽力均增加和立方体各向异性出现,这导致非常增强的阻尼。 FMR线宽具有非线性频率依赖性,它提供了直接证据,即放松不是吉尔伯特阻尼的放松,但考虑从两氧化镁散射(TMS)的贡献也很重要。 TMS在结晶膜中占据阻尼过程,主要由由于晶粒生长而产生的各向异性分散。因此,该工作将微观结构和各向异性的变化连接到磁化动态,特别是FMR线宽。

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