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Static and dynamic magnetic properties of sputtered Fe-Ga thin films

机译:溅射Fe-Ga薄膜的静态和动态磁性能

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摘要

We present measurements of the static and dynamic properties of polycrystalline iron-gallium films, ranging from 20 nm to 80 nm and sputtered from an Fe0.8Ga0.2 target. Using a broadband ferromagnetic resonance setup in a wide frequency range, perpendicular standing spin-wave resonances were observed with the external static magnetic field applied in-plane. The field corresponding to the strongest resonance peak at each frequency is used to determine the effective magnetization, the g-factor and the Gilbert damping. Furthermore, the dependence of spin-wave mode on field-position is observed for several frequencies. The analysis of broadband dynamic properties allows determination of the exchange stiffness A = (18 ± 4) pJ/m and Gilbert damping α = 0.042 ± 0.005 for 40 nm and 80 nm thick films. These values are approximately consistent with values seen in epitaxially grown films, indicating the potential for industrial fabrication of magnetostrictive FeGa films for microwave applications.
机译:我们介绍了多晶铁-镓薄膜的静态和动态特性的测量结果,其范围从20 nm到80 nm,并且是从Fe0.8Ga0.2靶溅射得到的。使用宽频率范围内的宽带铁磁共振装置,在平面内施加外部静磁场的情况下,观察到垂直驻波自旋共振。对应于每个频率下最强共振峰的场用于确定有效磁化强度,g因子和吉尔伯特阻尼。此外,在几个频率上都观察到了自旋波模式对场位置的依赖性。宽带动态特性的分析可以确定40 nm和80 nm厚膜的交换刚度A =(18±4)pJ / m,吉尔伯特阻尼α= 0.042±0.005。这些值与在外延生长的膜中看到的值大致一致,表明工业制造用于微波应用的磁致伸缩FeGa膜的潜力。

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