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Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.)

机译:溅射流动方式对Fe-Ga薄膜(Ga原子百分比为30%)的结构性能和磁性能的影响

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摘要

In this paper we analyze the structure of Fe-Ga layers with a Ga content of ∼30 at.% deposited by the sputtering technique under two different regimes. We also studied the correlation between the structure and magnetic behavior of the samples. Keeping the Ar pressure fixed, we modified the flow regime from ballistic to diffusive by increasing the distance between the target and the substrate. X-ray diffraction measurements have shown a lower structural quality when growing in the diffusive flow. We investigated the impact of the growth regime by means of x-ray absorption fine structure (XAFS) measurements and obtained signs of its influence on the local atomic order. Full multiple scattering and finite difference calculations based on XAFS measurements point to a more relevant presence of a disordered A2 phase and of orthorhombic Ga clusters on the Fe-Ga alloy deposited under a diffusive regime; however, in the ballistic sample, a higher presence of D0_3/B2 phases is evidenced. Structural characteristics, from local to long range, seem to determine the magnetic behavior of the layers. Whereas a clear in-plane magnetic anisotropy is observed in the film deposited under ballistic flow, the diffusive sample is magnetically isotropic. Therefore, our experimental results provide evidence of a correlation between flow regime and structural properties and its impact on the magnetic behavior of a rather unexplored compositional region of Fe-Ga compounds.
机译:在本文中,我们分析了在两种不同情况下通过溅射技术沉积的Ga含量约为30 at。%的Fe-Ga层的结构。我们还研究了样品的结构与磁行为之间的相关性。在保持Ar压力不变的情况下,我们通过增加靶材与基板之间的距离,将流态从弹道改为扩散型。 X射线衍射测量表明,在扩散流中生长时,其结构质量较低。我们通过X射线吸收精细结构(XAFS)测量研究了生长方式的影响,并获得了其对局部原子序的影响的迹象。基于XAFS测量的完全多重散射和有限差分计算表明,在扩散状态下沉积的Fe-Ga合金中存在更相关的无序A2相和正交Ga团簇;然而,在弹道样本中,D0_3 / B2相的存在率更高。从局部到远距离的结构特征似乎决定了层的磁性能。尽管在弹道流作用下沉积的薄膜中观察到了明显的面内磁各向异性,但扩散样品是磁各向同性的。因此,我们的实验结果提供了流态与结构特性之间的相关性证据,以及它对Fe-Ga化合物的相当未探索的组成区域的磁行为的影响。

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