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Electrochemical synthesis of CuS(x)Se(1-x )thin film for supercapacitor application

机译:用于超级电容器应用的CUS(x)SE(1-x)薄膜的电化学合成

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摘要

The CuSxSe1-x thin films were deposited on conducting substrates using copper sulphate sodium thio-sulfate and selenium dioxide as a source of Cu, S, and Se by electrodeposition(ED) technique. The effect of the change in composition S and Se the structural and electrical properties of the CuSxSe1-x thin films was studied. The crystallite size, composition, microstructure, contact angle and capacitance studied using XRD, EDAX, SEM, CA, and CV. The X-Ray diffraction (XRD) graph reveals that the CuSxSe1-x films were polycrystalline in nature and CuS(0.6)Se(0.4 )shows crystallite size of 34 nm, Energy dispersive analysis X-Ray (EDAX), scanning electron microscopy (SEM) show the elemental composition and microstructures were changes with S and Se composition. The CuS(0.6)Se(0.4 )film show 31 degrees contact angle and specific capacitance of 159 F/g. (C) 2018 Published by Elsevier B.V.
机译:通过电沉积(ED)技术,沉积CUSXSE1-X薄膜在用硫酸铜硫酸钠和二氧化硒进行二氧化硒进行脱脂基板。 研究了组合物S和SE的变化的影响CUSXSE1-X-X薄膜的结构和电性能。 使用XRD,edax,SEM,CA和CV研究的微晶尺寸,组成,微观结构,接触角和电容。 X射线衍射(XRD)图表明,CUSXSE1-X薄膜在自然中是多晶,CUS(0.6)SE(0.4)表示微晶尺寸为34nm,能量分散分析X射线(edax),扫描电子显微镜( SEM)显示元素组合物和微观结构与S和SE组合物变化。 CUS(0.6)SE(0.4)薄膜显示31度接触角和159f / g的特定电容。 (c)2018由elestvier b.v出版。

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