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Electrochemical Synthesis of CuS Thin Film for Supercapacitor Application

机译:超级电容器应用中CUS薄膜的电化学合成

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In present research,walnut like copper sulfide is prepared via a facile single-step potentiostatic electrodeposition method on conducting stainless steel substrate.The walnut like morphology of copper sulfide thin film lies of microplates and further microplates converted to nanogranuals,by means of a change in deposition time and thickness.Copper sulfide thin film electrode reveals a specific capacitance of 132 F g~(-1)at 50 mA cm~(-2).The film thickness changes with deposition time.The films acquire maximum thickness of 610 nm for 25 min of deposition.X-ray diffraction analysis revels that the CuS thin films is polycrystalline in nature and the crystallite size is 29 nm.The peak at 612 cm~(-1)in the Fourier transform infrared spectroscopy spectra confirms the formation of CuS.The wettability study shows the hydrophilic nature,the contact angle of water with CuS electrode is 66°,and the charge transfer resistance of CuS electrode is 7.78 Ω.
机译:在目前的研究中,硫化铜如硫化铜,通过进行不锈钢基板进行耐受单步电位电沉积方法制备。硫化铜薄膜的形态等核桃呈微孔板和另外的微孔板通过变化转化为纳米格兰语。 沉积时间和厚度。硫化物薄膜电极在50mA cm〜(-2)下显示出132 f g〜(-1)的特定电容。膜厚度随沉积时间而变化。薄膜获得610nm的最大厚度 25分钟的沉积。X射线衍射分析陶醉于性质中的CUS薄膜是多晶,结晶尺寸为29nm。傅里叶变换红外光谱光谱中612cm〜(-1)的峰值确认了CUS的形成 。润湿性研究表明,亲水性,CUS电极的水接触角为66°,CUS电极的电荷传递电阻为7.78Ω。

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