首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Influence of spark plasma sintering temperature on the microstructures, dielectric and I-V properties of CaCu3Ti4O12 ceramics
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Influence of spark plasma sintering temperature on the microstructures, dielectric and I-V properties of CaCu3Ti4O12 ceramics

机译:CaCU3TI4O12陶瓷陶瓷烧结温度对微观结构,电介质和I-V性能的影响

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摘要

CaCu3Ti4O12 (CCTO) ceramics were prepared by the sol-gel process and sintered by the spark plasma sintering (SPS) process at different temperatures. The SPS process temperature has an important effect on the microtopography of CCTO ceramics. The results of EDS and positron annihilation spectroscopy indicate that Cu2+ diffuses from the inside to the surface of grains during the sintering process at high temperature. The permittivity (epsilon(r)) of CCTO ceramics at the corresponding frequencies increases with increasing SPS temperature. However, the frequency stability of epsilon(r) over the frequency range 40-10(6) Hz wanes gradually. The CCTO ceramics sintered at 900 degrees Cand 950 degrees C present very low dielectric loss values(about 0.02) near 10 kHz. The change in epsilon(r) and tans for CCTO ceramics can be explained by the internal barrier layer capacitance (IBLC) model and AC (alternating current) impedance spectra. The results of I-V nonlinear characteristics for CCTO ceramics make clear that the potential barrier height has a positive effect on the value of nonlinear coefficient. (C) 2020 Elsevier B.V. All rights reserved.
机译:通过溶胶 - 凝胶工艺制备Cacu3Ti4O12(CCTO)陶瓷,并通过在不同温度下的火花等离子体烧结(SPS)工艺烧结。 SPS工艺温度对CCTO陶瓷的微复印件具有重要作用。 EDS和正电子湮没光谱的结果表明Cu2 +在高温下在烧结过程中从内侧到晶粒表面的扩散。相应频率下的CCTO陶瓷的介电常数(ε(R))随着SPS温度的增加而增加。然而,epsilon(r)在频率范围内的频率稳定性40-10(6)HzWanes逐渐。 CCTO陶瓷在900度CAND 950度下烧结,呈现非常低的介电损耗值(约0.02),接近10kHz。内部阻挡层电容(IBLC)模型和AC(交流电流)阻抗谱可以解释epsilon(R)和TAN的变化和CCTO陶瓷。 CCTO陶瓷I-V非线性特性的结果明确表示潜在的阻挡高度对非线性系数的值具有积极影响。 (c)2020 Elsevier B.v.保留所有权利。

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