首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Structure, infrared reflectivity spectra and microwave dielectric properties of a low-firing microwave dielectric ceramic Pr2Zr3(MoO4)(9)
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Structure, infrared reflectivity spectra and microwave dielectric properties of a low-firing microwave dielectric ceramic Pr2Zr3(MoO4)(9)

机译:低烧制微波介质陶瓷PR2ZR3(MOO4)(9)的结构,红外反射率光谱和微波介电性能

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摘要

Pr2Zr3(MoO4)(9) ceramics were prepared by solid state reaction method and the microwave dielectric properties were investigated for the first time. Single-phase Pr2Zr3(MoO4)(9) ceramics with a space group R-3c were obtained in the whole sintering temperature range (600-800 degrees C) confirmed by X-ray diffraction (XRD) and Rietveld refinement. SEM images combined with high relative density (95.7%) suggested that well-densed Pr2Zr3(MoO4)(9) ceramic could formed at low sintering temperature 650 degrees C. The intrinsic factors affecting dielectric properties were analyzed according to chemical bonds theory of complex crystals and infrared spectra. Typically, the novel microwave dielectric ceramic Pr2Zr3(MoO4)(9) sintered at 650 degrees C exhibited desirable dielectric properties combination: epsilon(r) = 10.72, Q.f = 64,200 GHz (at 9.6 GHz) and tau(f) = -13.0 ppm/degrees C. (C) 2020 Elsevier B.V. All rights reserved.
机译:通过固态反应方法制备PR2ZR3(MOO4)(9)陶瓷,并首次研究微波介电性能。 通过X射线衍射(XRD)和RIETVELD改进的整个烧结温度范围(600-800℃)获得具有空间组R-3C的单相PR2ZR3(MOO4)(9)陶瓷。 SEM图像与高相对密度(95.7%)建议,在低烧结温度650℃下可以形成浓密的PR2ZR3(MOO4)(9)陶瓷。根据复合晶体的化学键理论,分析了影响介电性质的内在因素 和红外光谱。 通常,在650℃下烧结的新型微波介电陶瓷PR2ZR3(MOO4)(9)表现出理想的介电特性组合:ε(R)= 10.72,QF = 64,200GHz(9.6GHz)和TAU(F)= -13.0ppm / degresc.(c)2020 Elsevier BV保留所有权利。

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