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Crystal structure, infrared spectra and microwave dielectric properties of a novel low-firing Gd2Zr3(MoO4)(9) ceramic

机译:新型低烧制GD2ZR3(MOO4)(9)陶瓷的晶体结构,红外光谱和微波介电性能

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摘要

A new Gd2Zr3(MoO4)(9) (GZM) ceramic was prepared using the solid-state method at a low sintering temperature. A single phase, with trigonal structure in R-3c space group, was confirmed by the X-ray diffractometer. The crystal structure was further investigated through the Rietveld refinement results. Scanning electron microscopy characterized the dense GZM samples sintered at 725-800 degrees C with homogeneous microstructures. The chemical bonds theory of complex crystals was employed to investigate the structure-property relations of GZM samples in detail. The intrinsic properties were explored by the far-infrared spectrum, and the calculated microwave dielectric properties were in good agreement with the measured values. It could be concluded that the microwave dielectric property of GZM was mainly ascribed to the ion polarization rather electronic. The optimum microwave dielectric properties with a permittivity (epsilon(r)) of 10.78, a quality factor (Q.f) of 40,945 GHz and a temperature coefficient of resonant frequency (tau(f)) of -12.26 ppm/degrees C were achieved in GZM sample sintered at 725 degrees C.
机译:使用在低烧结温度下使用固态方法制备新的GD2ZR3(MOO4)(9)(GZM)陶瓷。通过X射线衍射仪确认具有R-3C空间组中的三角结构的单相。进一步通过RIETVELD改进结果进一步研究了晶体结构。扫描电子显微镜表征致密GZM样品,其溶胀为725-800℃,均匀的微观结构。使用复合晶体的化学键理论来研究GZM样品的结构性质关系详细。由远红外光谱探索的内在特性,并且计算的微波介电性能与测量值良好。可以得出结论,GZM的微波介电性质主要归因于离子极化相当电子。在GZM中实现了10.78的介电常数(ε(R))的最佳微波介电性能(epsilon),质量因子(QF)和-12.26ppm /℃的谐振频率(Tau(F))的温度系数样品在725℃下烧结。

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