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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy
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Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy

机译:纳米级表面光电图映射2D材料和异质结构通过照明的开尔文探测力显微镜显微镜

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摘要

Nanomaterials are interesting for a variety of applications, such as optoelectronics and photovoltaics. However, they often have spatial heterogeneity, i.e., composition change or physical change in the topography or structure, which can lead to varying properties that would influence their applications. New techniques must be developed to understand and correlate spatial heterogeneity with changes in electronic properties. Here we highlight the technique of surface photovoltage Kelvin probe force microscopy (SPV-KFM), which is a modified version of noncontact atomic force microscopy capable of imaging not only the topography and surface potential but also the surface photovoltage on the nanoscale. We demonstrate its utility in probing monolayer WSe2-MoS2 lateral heterostructures, which form an ultrathin p-n junction promising for photovoltaic and optoelectronic applications. We show surface photovoltage maps highlighting the different photoresponse of the two material regions as a result of the effective charge separation across this junction. Additionally, we study the variations between different heterostructure flakes and emphasize the importance of controlling the synthesis and transfer of these materials to obtain consistent properties and measurements.
机译:纳米材料对各种应用有趣,例如光电子和光伏。然而,它们通常具有空间异质性,即地形或结构的组成变化或物理变化,这可能导致影响其应用的不同性质。必须开发新技术以了解和将空间异质性与电子特性的变化相关联。在这里,我们突出了表面光伏kelvin探针力显微镜(SPV-KFM)的技术,这是一种不接触原子力显微镜的修饰版,不仅能够成像,不仅是纳米级的地形和表面电位而且表面光电电压。我们展示其在探测单层WSE2-MOS2横向异质结构中的实用性,其形成用于光伏和光电应用的超薄P-N结。我们显示表面光伏图突出显示两种材料区域的不同光响应,由于该交叉点的有效电荷分离。此外,我们研究不同异质结构薄片之间的变化,并强调控制这些材料的合成和转移以获得一致的性能和测量。

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