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机译:掺杂MOS2单层核碱基的吸附行为:DFT研究
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Wuhan Univ Technol Sch Automat Wuhan 430070 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Chongqing Univ Educ Minist China Key Lab Optoelect Technol &
Syst Chongqing 400044 Peoples R China;
Southern Univ Sci &
Technol Sch Microelect Shenzhen 518055 Peoples R China;
机译:掺杂MOS2单层核碱基的吸附行为:DFT研究
机译:S空位或非金属原子(C,N和F)掺杂在单层MOS2上的分子(H2S,BF4)的吸附行为的影响
机译:铂改装MOS2单层用于SF6分解产品的吸附和气体传感:DFT研究
机译:SF6分解组分SO2,SOF2,SO2F2对RH掺杂MOS2的吸附行为
机译:单层MoS2和MoS2 /量子点杂化物:新型光电材料。
机译:DFT研究Ni掺杂MoS2单层膜对H2S和SO2的吸附
机译:掺杂MOS2单层核碱基的吸附行为:DFT研究