Adsorption Behavior of SF6 Decomposed Components SO2, SOF2, SO2F2 on Rh-doped MoS2

摘要

It is essential to detect the characteristic gas products of SF6 decomposition for fault diagnosis of gas-insulated switchgear (GIS). The model of Rh doped MoS2 was built by Materials Studio software. The micro process of three SF6 partial dissociation products (SO2, SOF2, SO2F2) approaching the Rh-MoS2 surface and reaching a stable state was simulated. The modification effect of Rh doped MoS2 was studied by the key adsorption parameters such as the adsorption structure, bandgap, absorption energy and charge transfer. As a result, the electrical property and chemical activity are significantly improved in comparison with the pristine MoS2 monolayers by selecting the most stable Rh doping site. Simultaneously, it was found that Rh-MoS2 monolayer had good gas sensitivity to SO2 and SOF2 with chemical adsorption.