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Photoelectron angular distribution from free SiO2 nanoparticles as a probe of elastic electron scattering

机译:从游离SiO2纳米颗粒的光电角分布作为弹性电子散射的探针

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In order to gain quantitative information on the surface composition of nanoparticles from X-ray photoelectron spectroscopy, a detailed understanding of photoelectron transport phenomena in these samples is needed. Theoretical results on the elastic and inelastic scattering have been reported, but a rigorous experimental verification is lacking. We report in this work on the photoelectron angular distribution from free SiO2 nanoparticles (d = 122 +/- 9 nm) after ionization by soft X-rays above the Si 2p and O1s absorption edges, which gives insight into the relative importance of elastic and inelastic scattering channels in the sample particles. The photoelectron angular anisotropy is found to be lower for photoemission from SiO2 nanoparticles than that expected from the theoretical values for the isolated Si and O atoms in the photoelectron kinetic energy range 20-380 eV. The reduced angular anisotropy is explained by elastic scattering of the outgoing photoelectrons from neighboring atoms, smearing out the atomic distribution. Photoelectron angular distributions yield detailed information on photoelectron elastic scattering processes allowing for a quantification of the number of elastic scattering events the photoelectrons have undergone prior to leaving the sample. The interpretation of the experimental photoelectron angular distributions is complemented by Monte Carlo simulations, which take inelastic and elastic photoelectron scattering into account using theoretical values for the scattering cross sections. The results of the simulations reproduce the experimental photoelectron angular distributions and provide further support for the assignment that elastic and inelastic electron scattering processes need to be considered. Published by AIP Publishing.
机译:为了获得关于来自X射线光电子谱的纳米颗粒的表面组成的定量信息,需要详细了解这些样品中的光电子传输现象。报道了弹性和非弹性散射的理论结果,但缺乏严格的实验验证。在通过Si 2P和O1S吸收边缘高于Si 2P和O1S吸收边缘的软X射线之后,从游离SiO2纳米颗粒(D = 122 +/- 9nm)的光电子角分布上报告了光电子角分布,这使得能够洞察弹性和弹性的相对重要性样品颗粒中的非弹性散射通道。发现光电子角各向异性对于来自SiO2纳米粒子的光曝光而不是从光电电能范围20-380eV中的分离的Si和O原子的理论值预期的预期。通过从相邻原子的外出光电子的弹性散射来解释减小的角度各向异性,涂抹原子分布。光电子角分布产生关于光电子弹性散射工艺的详细信息,允许定量光电子在离开样品之前经过的弹性散射事件的数量。实验光电子角分布的解释是由蒙特卡罗模拟的互补,其使用散射横截面的理论值来占用非弹性和弹性光电子散射。模拟结果再现实验光电子角度分布,并提供了对需要考虑弹性和内弹性电子散射过程的分配的进一步支持。通过AIP发布发布。

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