...
首页> 外文期刊>Physical review, B >Non-necessity of band inversion process in two-dimensional topological insulators for bulk gapless states and topological phase transitions
【24h】

Non-necessity of band inversion process in two-dimensional topological insulators for bulk gapless states and topological phase transitions

机译:二维拓扑绝缘体中的带反转过程的非必要性,用于散装无形阶段和拓扑阶段过渡

获取原文
获取原文并翻译 | 示例
           

摘要

In commonly employed models for two-dimensional (2D) topological insulators, bulk gapless states are well known to form at the band inversion points where the degeneracy of the states is protected by symmetries. It is thus sometimes quite tempting to consider this feature, the occurrence of gapless states, a result of the band inversion process under protection of the symmetries. Similarly, the band inversion process might even be perceived as necessary to induce 2D topological phase transitions. To clarify these misleading perspectives, we propose a simple model with a flexible Chern number to demonstrate that the bulk gapless states emerge at the phase boundary of topological phase transitions, despite the absence of a band inversion process. Furthermore, the bulk gapless states do not need to occur at the special k points protected by symmetries. Given the significance of these fundamental conceptual issues and their widespread influence, our clarification should generate strong general interests and significant impacts. Furthermore, the simplicity and flexibility of our general model with an arbitrary Chern number should prove useful in a wide range of future studies of topological states of matter.
机译:在普通使用的二维(2D)拓扑绝缘体模型中,众所周知,在频段反转点处众所周知,批量无间隙状态在燃点反转点处形成,其中各种的退化受到对称性。因此,有时候要考虑这个特征,因此在对称保护下的频带反演过程的结果的情况非常诱人。类似地,甚至可能认为频带反转过程是必要的,以诱导2D拓扑相转变。为了澄清这些误导性的观点,我们提出了一种具有灵活的CHERN号码的简单模型,以证明散装阶段在拓扑阶段转换的相位边界中出现,尽管没有带频带反演过程。此外,批量无间隙状态不需要在受对称保护的特殊k点处发生。鉴于这些基本概念问题的重要性及其广泛影响,我们的澄清应产生强烈的一般利益和重大影响。此外,我们的通用模型与任意Chern号码的简单性和灵活性应在广泛的物质拓扑状态的广泛研究中证明是有用的。

著录项

  • 来源
    《Physical review, B》 |2017年第20期|共5页
  • 作者

    Xi Wenjie; Ku Wei;

  • 作者单位

    Shanghai Jiao Tong Univ Sch Phys &

    Astron Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Phys &

    Astron Shanghai 200240 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号