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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Non-necessity of band inversion process in two-dimensional topological insulators for bulk gapless states and topological phase transitions
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Non-necessity of band inversion process in two-dimensional topological insulators for bulk gapless states and topological phase transitions

机译:对于本体无间隙状态和拓扑相变,二维拓扑绝缘体中的带反转过程不必要

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摘要

In commonly employed models for two-dimensional (2D) topological insulators, bulk gapless states are well known to form at the band inversion points where the degeneracy of the states is protected by symmetries. It is thus sometimes quite tempting to consider this feature, the occurrence of gapless states, a result of the band inversion process under protection of the symmetries. Similarly, the band inversion process might even be perceived as necessary to induce 2D topological phase transitions. To clarify these misleading perspectives, we propose a simple model with a flexible Chern number to demonstrate that the bulk gapless states emerge at the phase boundary of topological phase transitions, despite the absence of a band inversion process. Furthermore, the bulk gapless states do not need to occur at the special k points protected by symmetries. Given the significance of these fundamental conceptual issues and their widespread influence, our clarification should generate strong general interests and significant impacts. Furthermore, the simplicity and flexibility of our general model with an arbitrary Chern number should prove useful in a wide range of future studies of topological states of matter.
机译:在二维(2D)拓扑绝缘体的常用模型中,众所周知,无间隙状态会在能通过对称性保护状态退化的能带反转点形成。因此,有时很容易考虑这个特征,即无间隙状态的出现,这是在对称性保护下的频带反转过程的结果。类似地,甚至可以将频带反转过程视为诱发2D拓扑相变的必要条件。为了阐明这些误导性观点,我们提出了一个具有灵活Chern数的简单模型,以证明尽管没有带反转过程,但本体的无间隙状态出现在拓扑相变的相界处。此外,本体无间隙状态不需要在对称性保护的特殊k点处发生。考虑到这些基本概念问题的重要性及其广泛的影响,我们的澄清应引起强烈的普遍兴趣和重大影响。此外,具有任意Chern数的通用模型的简单性和灵活性在以后对物质拓扑状态的广泛研究中将被证明是有用的。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2017年第20期|201110.1-201110.5|共5页
  • 作者

    Wenjie Xi; Wei Ku;

  • 作者单位

    School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;

    School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China,Tsung-Dao Lee Institute, Shanghai 200240, China,Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shanghai 200240, China;

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