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Induced Ising spin-orbit interaction in metallic thin films on monolayer WSe2

机译:诱导在单层WSE2上金属薄膜中的旋转轨道相互作用

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Spin-orbit interaction (SOI) in superconductors can protect Cooper pairs from external magnetic fields and thus enhance the upper critical field. This effect is most significant in ultrathin superconductor films when the field is in plane. Recently, it was found that this protection is especially efficient in so-called Ising superconductors whose special form of SOI pins the electron spins in the out-of-plane direction and the in-plane critical field is enhanced up to tens of Tesla. We report that a strong SOI can be induced in metallic thin films by proximity to monolayer tungsten diselenide (WSe2), a semiconductor with intrinsic strong Ising SOI. We demonstrate that the upper critical field of the thin-film superconductor is enhanced by the induced SOI, even though the zero-field critical temperature is unchanged or reduced.
机译:超导体中的旋转轨道相互作用(SOI)可以保护Cooper对从外部磁场保护,从而提高上临界领域。 当场在平面中时,这种效果在超薄超导体膜中最显着。 最近,发现该保护在所谓的读取超导体中特别有效,其特殊形式的SOI引脚在平面外方向上的电子旋转和面内临界场得到增强至数十的特斯拉。 我们报告说,通过邻近单层钨酶(WSE2),具有本征强度均匀SOI的半导体,可以在金属薄膜中诱导强大的SOI。 我们表明,即使零场临界温度不变或降低,诱导的SOI也增强了薄膜超导体的上临界场。

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